Search results for " a-Si:H"
showing 4 items of 4 documents
Broadband photocurrent enhancement in a-Si:H solar cells with plasmonic back reflectors
2014
The authors acknowledge Francesco Ruffino for the AFM measurements. This work was funded by the EU FP7 Marie Curie Action FP7-PEOPLE-2010-ITN through the PROPHET project (Grant No. 264687), the bilateral CNR/AVCR project "Photoresponse of nanostructures for advanced photovoltaic applications", the MIUR project Energetic (Grant no. PON02_00355_3391233) and by the Portuguese Science Foundation (FCT-MEC) through the Strategic Project PEst-C/CTM/LA0025/2013-14 and the research project PTDC/CTM-ENE/2514/2012. Plasmonic light trapping in thin film silicon solar cells is a promising route to achieve high efficiency with reduced volumes of semiconductor material. In this paper, we study the enhance…
Instabilities Effects in Thin Film Solar Cells: Reversible Ageing, Performance Recovery and Improvement by Electrical Stresses
Post UV irradiation annealing of E’ centers in silica controlled by H2 diffusion
2004
Abstract We investigate the isothermal annealing of E′ centers generated by UV photons (266 nm) of a pulsed Nd:YAG laser in two natural silica types differing for their OH content. Electron spin resonance and absorption spectra recorded at room temperature at different delays from the laser exposure evidenced a partial reduction of E′ centers, more pronounced in the wet silica. These post irradiation kinetics complete within 10 5 s, regardless the silica type, and they are consistent with a diffusion limited reaction between the E′ centers and the molecular hydrogen H 2 . Analysis of our data is done by theoretical fits using the Waite's equation and compared with the H 2 diffusion paramete…
Simulation studies of electronic transport in a-Si:H thin film solar cells
2009
The thin film solar cells in Hydrogenated Amorphous Silicon (a-Si:H) are attractive for cheaper production and used in ultra low cost, high volume applications but have a relatively lower electronic performance. These limitations are mainly due to properties of the a-Si:H and relies on the production technique. In this study we investigate the physical mechanisms which are on the basis of the electronic transport and their relation with the technological processes. The transport-simulation computer program ATLAS (Silvaco) has been used to examine the role of the mid gap defect density in determining the performance of a-Si:H p-i-n homojunction solar cell.